Electrical Characteristics ( T A = 25 O C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
I D = 250 μA, Referenced to 25 C
BV DSS
? BV DSS / ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = 250 μA
V DS = 48 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
o
60
60
1
100
-100
V
mV/ o C
μA
nA
nA
ON CHARACTERISTICS
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 250 μA
1
1.7
3
V
T J =125°C
0.7
2.2
R DS(ON)
Static Drain-Source On-Resistance
V GS = 10 V, I D = 3.5 A
0.076
0.1
?
V GS = 4.5 V, I D = 2.5 A
T J =125°C
T J =125°C
0.124
0.103
0.166
0.18
0.2
0.3
I D(ON)
g FS
On-State Drain Current
Forward Transconductance
V GS = 10 V, V DS = 10 V
V DS = 10 V, I D = 3.5 A
10
5.3
A
S
DYNAMIC CH ARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
345
110
25
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
V DS = 30 V, I D = 1 A
V GS = 10 V , R GEN = 6 ?
V DS = 30 V, I D = 3.5 A,
V GS = 10 V
5
7.5
20
7
12.9
1.7
25
30
50
40
30
ns
nC
Q gd
Gate-Drain Charge
3.2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
Maximum Continuous Drain-Source Diode Forward Current
1.3
A
V SD
t rr
I rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
V GS = 0 V, I S = 1.3 A
V GS = 0 V, I F = 1.3 A,
dI F /dt = 100 A/μs
(Note 2)
0.8
40
1.5
1.2
V
ns
A
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by
design while R θ CA is determined by the user's board design.
a. 78 O C/W on a 0.5 in 2
pad of 2oz copper.
b. 125 O C/W on a 0.02 in 2
pad of 2oz copper.
c. 135 O C/W on a 0.003 in 2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDS9945 Rev.B
相关PDF资料
NDS9948 MOSFET 2P-CH 60V 2.3A 8-SOIC
NDS9952A MOSFET N+P 30V 2.9A 8-SOIC
NDT014L MOSFET N-CH 60V 2.8A SOT-223
NDT014 MOSFET N-CH 60V 2.7A SOT-223-4
NDT2955 MOSFET P-CH 60V 2.5A SOT-223-4
NDT3055L MOSFET N-CH 60V 4A SOT-223-4
NDT3055 MOSFET N-CH 60V 4A SOT-223-4
NDT451AN_J23Z MOSFET N-CH 30V 7.2A SOT-223
相关代理商/技术参数
NDS9945 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR, MOSFET
NDS9945 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS9945_L86Z 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS9947 功能描述:MOSFET Dual 20V P-Ch MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS9947_02 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual 20V P-Channel PowerTrench MOSFET
NDS9948 功能描述:MOSFET Dual PCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS9948 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS9948_02 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual 60V P-Channel PowerTrench MOSFET